Research Article
Open Access
Interband optical transition energies in InAs/InP semiconductor nanostructure
S.Saravanan1* and A.John Peter2
1Dept.of Physics, GTN Arts College, Dindigul-624 005. India.
*Research Scholar, Bharathiar University, Coimbatore. India.
2Dept.of Physics, Government Arts College, Melur-625 106. Madurai. India.
*Research Scholar, Bharathiar University, Coimbatore. India.
2Dept.of Physics, Government Arts College, Melur-625 106. Madurai. India.
S.Saravanan et al /Int.J. TechnoChem Res. 2017,3(1),pp 180-182.
Abstract
Group III-V narrow band gap semiconducting materials are considered to be promising
candidates for infrared photo-detectors in the long wavelength regions. Especially P based InAs
semiconductor is considered to be a promising material for fibre optical communication due to the
emission of mid-infrared wavelengths 1. The heavy hole exciton binding energy in a InAs0.8P0.2/InP
quantum well wire is studied taking into consideration of strain contributions between the inner and outer
material in the presence of magnetic field strength. The energy difference of the ground and the first
excited state is computed taking into account the effects of quantum confinement. The effects of
geometrical confinement and the magnetic field on the optical band gap are investigated in the
InAs0.8P0.2/InP quantum well wire. Magnetic field induced optical gain with the incident photon energy
is computed in the presence of magnetic field strength and the geometrical confinement. The larger
optical gain depends on the optical transition in the optical matrix element and the transition life time 2.
This approach can be used to obtain long wavelength emission of 1.55 μm for optical fiber
telecommunication applications. The optical, electrical and transport properties are found to enhance
with the effects of external perturbations and the spatial confinement effects with respect to bulk values
due to their reduction of dimensionality of nano-heterostructures3. The studies of optical transitions
between two energy levels are recognized to be important for the understanding of electronic properties
in order to model any suitable optical devices. The higher optical transition energies are observed in any
low dimensional semiconductor system. The wide applications of this system are solar cells, photodetectors,
semiconductor light-emitting diodes, laser diodes and optical modulators.
candidates for infrared photo-detectors in the long wavelength regions. Especially P based InAs
semiconductor is considered to be a promising material for fibre optical communication due to the
emission of mid-infrared wavelengths 1. The heavy hole exciton binding energy in a InAs0.8P0.2/InP
quantum well wire is studied taking into consideration of strain contributions between the inner and outer
material in the presence of magnetic field strength. The energy difference of the ground and the first
excited state is computed taking into account the effects of quantum confinement. The effects of
geometrical confinement and the magnetic field on the optical band gap are investigated in the
InAs0.8P0.2/InP quantum well wire. Magnetic field induced optical gain with the incident photon energy
is computed in the presence of magnetic field strength and the geometrical confinement. The larger
optical gain depends on the optical transition in the optical matrix element and the transition life time 2.
This approach can be used to obtain long wavelength emission of 1.55 μm for optical fiber
telecommunication applications. The optical, electrical and transport properties are found to enhance
with the effects of external perturbations and the spatial confinement effects with respect to bulk values
due to their reduction of dimensionality of nano-heterostructures3. The studies of optical transitions
between two energy levels are recognized to be important for the understanding of electronic properties
in order to model any suitable optical devices. The higher optical transition energies are observed in any
low dimensional semiconductor system. The wide applications of this system are solar cells, photodetectors,
semiconductor light-emitting diodes, laser diodes and optical modulators.
Keywords
Quantum confinement, optical transition energy, optical gain, exciton binding energy, external perturbations.
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